Disorder-induced magnetooscillations in bilayer graphene at high bias

Details Disorder-induced magnetooscillations in bilayer graphene at high bias Disorder-induced magnetooscillations in bilayer graphene at high bias

2010-05-28

arxiv.org/abs/1005.5220v1

Phys. Rev. B 83, 045406 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 2 figures

Scientific paper

10.1103/PhysRevB.83.045406

Energy spectrum of biased bilayer graphene near the bottom has a "Mexican-hat"-like shape. For the Fermi level within the Mexican hat we predict that, apart from conventional magnetooscillations which vanish with temperature, there are additional magnetooscillations which are weakly sensitive to temperature. These oscillations are also insensitive to a long-range disorder. Their period in magnetic field scales with bias, V, as V^2. The origin of these oscillations is the disorder-induced scattering between electron-like and hole-like Fermi-surfaces, specific for Mexican hat.

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