Dislocation scattering in a two-dimensional electron gas

Details Dislocation scattering in a two-dimensional electron gas Dislocation scattering in a two-dimensional electron gas

2000-03-13

arxiv.org/abs/cond-mat/0003199v1

Physics

Condensed Matter

Materials Science

6 pages, 3 figures

Scientific paper

10.1063/1.126143

A theory of scattering by charged dislocation lines in a two-dimensional electron gas (2DEG) is developed. The theory is directed towards understanding transport in AlGaN/GaN high-electron-mobility transistors (HEMT), which have a large number of line dislocations piercing through the 2DEG. The scattering time due to dislocations is derived for a 2DEG in closed form. This work identifies dislocation scattering as a mobility-limiting scattering mechanism in 2DEGs with high dislocation densities. The insensitivity of the 2DEG (as compared to bulk) to dislocation scattering is explained by the theory.

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