Direct strain and elastic energy evaluation in rolled-up semiconductor tubes by x-ray micro-diffraction

Details Direct strain and elastic energy evaluation in rolled-up semiconductor tubes by x-ray micro-diffraction Direct strain and elastic energy evaluation in rolled-up semiconductor tubes by x-ray micro-diffraction

2008-09-07

arxiv.org/abs/0809.1253v1

Physics

Condensed Matter

Materials Science

32 pages (single column), 9 figures, 39 references

Scientific paper

10.1103/PhysRevB.79.035301

We depict the use of x-ray diffraction as a tool to directly probe the strain status in rolled-up semiconductor tubes. By employing continuum elasticity theory and a simple model we are able to simulate quantitatively the strain relaxation in perfect crystalline III-V semiconductor bi- and multilayers as well as in rolled-up layers with dislocations. The reduction in the local elastic energy is evaluated for each case. Limitations of the technique and theoretical model are discussed in detail.

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