Direct measurements of the fractional quantum Hall effect gaps

Details Direct measurements of the fractional quantum Hall effect gaps Direct measurements of the fractional quantum Hall effect gaps

2007-02-16

arxiv.org/abs/cond-mat/0702390v1

Phys. Rev. Lett. 99, 086802 (2007)

Physics

Condensed Matter

Strongly Correlated Electrons

Scientific paper

10.1103/PhysRevLett.99.086802

We measure the chemical potential jump across the fractional gap in the low-temperature limit in the two-dimensional electron system of GaAs/AlGaAs single heterojunctions. In the fully spin-polarized regime, the gap for filling factor nu=1/3 increases LINEARLY with magnetic field and is coincident with that for nu=2/3, reflecting the electron-hole symmetry in the spin-split Landau level. In low magnetic fields, at the ground-state spin transition for nu=2/3, a correlated behavior of the nu=1/3 and nu=2/3 gaps is observed.

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