Direct measurements of band gap grading in polycrystalline CIGS solar cells

Details Direct measurements of band gap grading in polycrystalline CIGS solar cells Direct measurements of band gap grading in polycrystalline CIGS solar cells

2010-09-20

arxiv.org/abs/1009.3836v1

Physics

Optics

3 pages, 4 figures

Scientific paper

We present direct measurements of depth-resolved band gap variations of CuIn(1-x)Ga(x)Se2 thin-film solar cell absorbers. A new measurement technique combining parallel measurements of local thin-film interference and spectral photoluminescence was developed for this purpose. We find sample-dependent correlation parameters between measured band gap depth and composition profiles, and emphasize the importance of direct measurements. These results bring a quantitative insight into the electronic properties of the solar cells and open a new way to analyze parameters that determine the efficiency of solar cells.

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