Direct Measurement of Piezoelectric Response around Ferroelectric Domain Walls in Crystals with Engineered Domain Configuration

Details Direct Measurement of Piezoelectric Response around Ferroelectric Domain Walls in Crystals with Engineered Domain Configuration Direct Measurement of Piezoelectric Response around Ferroelectric Domain Walls in Crystals with Engineered Domain Configuration

2008-12-31

arxiv.org/abs/0901.0145v1

Phys. Rev. B 81, 024114 (2010)

Physics

Condensed Matter

Materials Science

Scientific paper

10.1103/PhysRevB.81.024114

We report the first investigation of the piezoelectric response on a nanoscale in the poled ferroelectric crystals with engineered configuration of domains. Piezoresponse force microscopy of tetragonal 0.63PMN-0.37PT relaxor-based ferroelectric crystals reviled that the d33 piezoelectric coefficient is significantly reduced within the distance of about 1 um from the uncharged engineered domain wall. This finding is essential for understanding the mechanisms of the giant piezoresponse in relaxor-based crystals and for designing new piezoelectric materials.

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