Direct Graphene Growth on Insulator

Details Direct Graphene Growth on Insulator Direct Graphene Growth on Insulator

2011-06-10

arxiv.org/abs/1106.2070v1

Phys. Status Solidi B, 248, No. 11, 2619--2622 (2011)

Physics

Condensed Matter

Materials Science

13 pages, 6 figures

Scientific paper

10.1002/pssb.201100052

Fabrication of graphene devices is often hindered by incompatibility between the silicon technology and the methods of graphene growth. Exfoliation from graphite yields excellent films but is good mainly for research. Graphene grown on metal has a technological potential but requires mechanical transfer. Growth by SiC decomposition requires a temperature budget exceeding the technological limits. These issues could be circumvented by growing graphene directly on insulator, implying Van der Waals growth. During growth, the insulator acts as a support defining the growth plane. In the device, it insulates graphene from the Si substrate. We demonstrate planar growth of graphene on mica surface. This was achieved by molecular beam deposition above 600{\deg}C. High resolution Raman scans illustrate the effect of growth parameters and substrate topography on the film perfection. Ab initio calculations suggest a growth model. Data analysis highlights the competition between nucleation at surface steps and flat surface. As a proof of concept, we show the evidence of electric field effect in a transistor with a directly grown channel.

Affiliated with

Also associated with

No associations

Rating

Direct Graphene Growth on Insulator does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Direct Graphene Growth on Insulator, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Direct Graphene Growth on Insulator will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-320427