Direct generation of charge carriers in c-Si solar cells due to embedded nanoparticles

Details Direct generation of charge carriers in c-Si solar cells due to embedded nanoparticles Direct generation of charge carriers in c-Si solar cells due to embedded nanoparticles

2007-08-20

arxiv.org/abs/0708.2662v1

Physics

Condensed Matter

Other Condensed Matter

1 figure

Scientific paper

10.1063/1.2809368

It is known that silicon is an indirect band gap material, reducing its efficiency in photovoltaic applications. Using surface plasmons in metallic nanoparticles embedded in a solar cell has recently been proposed as a way to increase the efficiency of thin film silicon solar cells. The dipole mode that dominates the plasmons in small particles produces an electric field having Fourier components with all wave numbers. In this work, we show that such a field creates electron-hole-pairs without phonon assistance, and discuss the importance of this effect compared to radiation from the particle and losses due to heating.

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