Direct evidence of the self-compression of injected electron-hole plasma in silicon

Details Direct evidence of the self-compression of injected electron-hole plasma in silicon Direct evidence of the self-compression of injected electron-hole plasma in silicon

2008-01-16

arxiv.org/abs/0801.2528v3

phys. stat. sol. (b), 2008, v. 245, No. 6, p.p. 1181-1183

Physics

Condensed Matter

Materials Science

3 pages, 2 figures, published in Physica Status Solidi (b)

Scientific paper

10.1002/pssb.200743504

A surface distribution of the electroluminescence intensity of silicon p-n light emitting diodes is obtained under space scanning experiments at room temperature. An emitting surface of the diodes, represented by a few small bright emitting dots and a weakly emitting area outside the dots, serves as a direct evidence of the self-compression of injected electron-hole plasma in silicon. The plasma self-compression explains concentration of injected carriers into one or a few strongly emitting plasma drops.

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