Diodes with Breakdown Voltages Enhanced by the Metal-Insulator Transition of LaAlO$_3$-SrTiO$_3$ Interfaces

Details Diodes with Breakdown Voltages Enhanced by the Metal-Insulator Transition of LaAlO$_3$-SrTiO$_3$ Interfaces Diodes with Breakdown Voltages Enhanced by the Metal-Insulator Transition of LaAlO$_3$-SrTiO$_3$ Interfaces

2010-05-06

arxiv.org/abs/1005.0941v1

Physics

Condensed Matter

Materials Science

Scientific paper

10.1063/1.3428433

Using the metal-insulator transition that takes place as a function of
carrier density at the LaAlO$_3$-SrTiO$_3$ interface, oxide diodes have been
fabricated with room-temperature breakdown voltages of up to 200 V. With
applied voltage, the capacitance of the diodes changes by a factor of 150. The
diodes are robust and operate at temperatures up to 270 C.

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