Diminished Short Channel Effects in Nanoscale Double-Gate Silicon-On-Insulator Metal-Oxide- Semiconductor Field-Effect-Transistors due to Induced Back-Gate Step Potential

Details Diminished Short Channel Effects in Nanoscale Double-Gate Silicon-On-Insulator Metal-Oxide- Semiconductor Field-Effect-Transistors due to Induced Back-Gate Step Potential Diminished Short Channel Effects in Nanoscale Double-Gate Silicon-On-Insulator Metal-Oxide- Semiconductor Field-Effect-Transistors due to Induced Back-Gate Step Potential

2010-08-18

arxiv.org/abs/1008.3016v1

Japanese Journal of Applied Physics, Vol.44, No. 9A, pp.6508-6509, September 2005

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Journal Paper

Scientific paper

In this letter we discuss how the short channel behavior in sub 100 nm
channel range can be improved by inducing a step surface potential profile at
the back gate of an asymmetrical double gate (DG) Silicon-On-Insulator (SOI)
Metal-Oxide-Semiconductor Field-Effect- Transistor (MOSFET) in which the front
gate consists of two materials with different work functions.

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