Diluted chirality dependence in edge rough graphene nanoribbon field-effect transistors

Details Diluted chirality dependence in edge rough graphene nanoribbon field-effect transistors Diluted chirality dependence in edge rough graphene nanoribbon field-effect transistors

2009-04-14

arxiv.org/abs/0904.2116v3

Appl. Phys. Lett. 94, 223112 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1063/1.3147187

We investigate the role of various structural nonidealities on the performance of armchair-edge graphene nanoribbon field effect transistors (GNRFETs). Our results show that edge roughness dilutes the chirality dependence often predicted by theory but absent experimentally. Instead, GNRs are classifiable into wide (semi-metallic) vs narrow (semiconducting) strips, defining thereby the building blocks for wide-narrow-wide all-graphene devices and interconnects. Small bandgaps limit drain bias at the expense of band-to-band tunneling in GNRFETs. We outline the relation between device performance metrics and non-idealities such as width modulation, width dislocations and surface step, and non-ideality parameters such as roughness amplitude and correlation length.

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