Dilute nitride vertical-cavity surface-emitting lasers

Details Dilute nitride vertical-cavity surface-emitting lasers Dilute nitride vertical-cavity surface-emitting lasers

Jul 2003

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2003njph....5...84j&link_type=abstract

New Journal of Physics, Volume 5, Issue 1, pp. 84 (2003).

Physics

1

Scientific paper

A novel quaternary compound semiconductor material, Ga1 - xInxNyAs1 - y(0 < x, y < 1), was successfully used in demonstrating optically pumped continuous-wave vertical-cavity surface-emitting lasers emitting at 1280 nm. The epitaxial heterostructures of each laser wafer were grown in a single nucleation process by conventional molecular beam epitaxy using a nitrogen radio-frequency plasma source. The lasers consist of GaAs/AlAs distributed Bragg reflector mirrors and 6 or 15 Ga0.65In0.35N0.014As0.986/GaAs quantum wells with special strain-mediating layers. The laser characterization was carried out by using a fibre pigtailed 980 nm pump laser diode, 980/1300 nm wavelength division multiplexer and an optical spectrum analyser. A high optical output power of 3.5 mW was coupled lenslessly into a standard single-mode fibre.

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