Diffusive Transport in Quasi-2D and Quasi-1D Electron Systems

Details Diffusive Transport in Quasi-2D and Quasi-1D Electron Systems Diffusive Transport in Quasi-2D and Quasi-1D Electron Systems

2008-11-12

arxiv.org/abs/0811.1937v1

J. Comput. Theor. Nanosci. 6, 1725-1753 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Review article, to appear in Journal of Computational and Theoretical Nanoscience

Scientific paper

10.1166/jctn.2009.1240

Quantum-confined semiconductor structures are the cornerstone of modern-day electronics. Spatial confinement in these structures leads to formation of discrete low-dimensional subbands. At room temperature, carriers transfer among different states due to efficient scattering with phonons, charged impurities, surface roughness and other electrons, so transport is scattering-limited (diffusive) and well described by the Boltzmann transport equation. In this review, we present the theoretical framework used for the description and simulation of diffusive electron transport in quasi-two-dimensional and quasi-one-dimensional semiconductor structures. Transport in silicon MOSFETs and nanowires is presented in detail.

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