Diffusion of Mn interstitials in (Ga,Mn)As epitaxial layers

Details Diffusion of Mn interstitials in (Ga,Mn)As epitaxial layers Diffusion of Mn interstitials in (Ga,Mn)As epitaxial layers

2011-05-04

arxiv.org/abs/1105.0849v1

Physics

Condensed Matter

Materials Science

11 pages, 5 figures

Scientific paper

Magnetic properties of thin (Ga,Mn)As layers improve during annealing by out-diffusion of interstitial Mn ions to a free surface. Out-diffused Mn atoms participate in the growth of a Mn-rich surface layer and a saturation of this layer causes an inhibition of the out-diffusion. We combine high-resolution x-ray diffraction with x-ray absorption spectroscopy and a numerical solution of the diffusion problem for the study of the out-diffusion of Mn interstitials during a sequence of annealing steps. Our data demonstrate that the out-diffusion of the interstitials is substantially affected by the internal electric field caused by an inhomogeneous distribution of charges in the (Ga,Mn)As layer.

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