Diffuse-interface model for nanopatterning induced by self-sustained ion etch masking

Details Diffuse-interface model for nanopatterning induced by self-sustained ion etch masking Diffuse-interface model for nanopatterning induced by self-sustained ion etch masking

2010-03-05

arxiv.org/abs/1003.1274v2

Phys. Rev. B 81, 161401(R), 2010

Physics

Condensed Matter

Materials Science

10 pages, 3 figures; minor revisions with respect to first version; figures nicened; journal ref. added

Scientific paper

10.1103/PhysRevB.81.161401

We construct a simple phenomenological diffuse-interface model for composition-induced nanopatterning during ion sputtering of alloys. In simulations, this model reproduces without difficulties the high-aspect ratio structures and tilted pillars observed in experiments. We investigate the time evolution of the pillar height, both by simulations and by {\it in situ} ellipsometry. The analysis of the simulation results yields a good understanding of the transitions between different growth regimes and supports the role of segregation in the pattern-formation process.

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