Difference of Oxide Hetero-Structure Junctions with Semiconductor Electronic Devices

Details Difference of Oxide Hetero-Structure Junctions with Semiconductor Electronic Devices Difference of Oxide Hetero-Structure Junctions with Semiconductor Electronic Devices

2008-12-11

arxiv.org/abs/0812.2071v1

CHIN.PHYS.LETT. Vol. 25, No. 9 (2008) 3378

Physics

Condensed Matter

Strongly Correlated Electrons

8 pages, 4 figures

Scientific paper

10.1088/0256-307X/25/9/076

Charge carrier injection performed in Pr0.7Ca0.3MnO3 (PCMO) hetero-structure junctions exhibits stable without electric fields and dramatic changes in both resistances and interface barriers, which are entirely different from behaviors of semiconductor devices. Disappearance and reversion of interface barriers suggest that the adjustable resistance switching of such hetero-structure oxide devices should associate with motion of charge carriers across interfaces. The results suggested that injected carriers should be still staying in devices and resulted in changes in properties, which guided to a carrier self-trapping and releasing picture in strongly correlated electronic framework. Observations in PCMO and oxygen deficient CeO2 devices show that oxides as functional materials could be used in microelectronics with some novel properties, in which interface is very important.

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