Dielectric Thickness Dependence of Carrier Mobility in Graphene with HfO2 Top Dielectric

Details Dielectric Thickness Dependence of Carrier Mobility in Graphene with HfO2 Top Dielectric Dielectric Thickness Dependence of Carrier Mobility in Graphene with HfO2 Top Dielectric

2010-10-05

arxiv.org/abs/1010.0913v1

Appl. Phys. Lett. 97, 123105 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 4 figures

Scientific paper

We investigate the carrier mobility in mono- and bi-layer graphene with a top HfO2 dielectric, as a function of the HfO2 film thickness and temperature. The results show that the carrier mobility decreases during the deposition of the first 2-4 nm of top dielectric and remains constant for thicker layers. The carrier mobility shows a relatively weak dependence on temperature indicating that phonon scattering does not play a dominant role in controlling the carrier mobility. The data strongly suggest that fixed charged impurities located in close proximity to the graphene are responsible for the mobility degradation.

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