Dielectric confinement of excitons in type-I and type-II semiconductor nanorods

Details Dielectric confinement of excitons in type-I and type-II semiconductor nanorods Dielectric confinement of excitons in type-I and type-II semiconductor nanorods

2010-11-29

arxiv.org/abs/1011.6177v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Journal of Physics: Condensed Matter (in press)

Scientific paper

We theoretically study the effect of the dielectric environment on the exciton ground state of CdSe and CdTe/CdSe/CdTe nanorods. We show that insulating environments enhance the exciton recombination rate and blueshift the emission peak by tens of meV. These effects are particularly pronounced for type-II nanorods. In these structures, the dielectric confinement may even modify the spatial distribution of electron and hole charges. A critical electric field is required to separate electrons from holes, whose value increases with the insulating strength of the surroundings.

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