Device Model for Graphene Bilayer Field-Effect Transistor

Details Device Model for Graphene Bilayer Field-Effect Transistor Device Model for Graphene Bilayer Field-Effect Transistor

2008-12-24

arxiv.org/abs/0812.4490v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

10 pages, 4 figures

Scientific paper

We present an analytical device model for a graphene bilayer field-effect transistor (GBL-FET) with a graphene bilayer as a channel, and with back and top gates. The model accounts for the dependences of the electron and hole Fermi energies as well as energy gap in different sections of the channel on the bias back-gate and top-gate voltages. Using this model, we calculate the dc and ac source-drain currents and the transconductance of GBL-FETs with both ballistic and collision dominated electron transport as functions of structural parameters, the bias back-gate and top-gate voltages, and the signal frequency. It is shown that there are two threshold voltages, $V_{th,1}$ and $V_{th,2}$, so that the dc current versus the top-gate voltage relation markedly changes depending on whether the section of the channel beneath the top gate (gated section) is filled with electrons, depleted, or filled with holes. The electron scattering leads to a decrease in the dc and ac currents and transconductances, whereas it weakly affects the threshold frequency. As demonstrated, the transient recharging of the gated section by holes can pronouncedly influence the ac transconductance resulting in its nonmonotonic frequency dependence with a maximum at fairly high frequencies.

Affiliated with

Also associated with

No associations

Rating

Device Model for Graphene Bilayer Field-Effect Transistor does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Device Model for Graphene Bilayer Field-Effect Transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Device Model for Graphene Bilayer Field-Effect Transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-395758