Device fabrication and transport measurements of FinFETs built with $^{28}$Si SOI wafers towards donor qubits in silicon

Details Device fabrication and transport measurements of FinFETs built with $^{28}$Si SOI wafers towards donor qubits in silicon Device fabrication and transport measurements of FinFETs built with $^{28}$Si SOI wafers towards donor qubits in silicon

2009-06-10

arxiv.org/abs/0906.1995v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

10 pages, 6 figures

Scientific paper

We report fabrication of transistors in a FinFET geometry using isotopically purified silicon-28 -on-insulator (28-SOI) substrates. Donor electron spin coherence in natural silicon is limited by spectral diffusion due to the residual $^{29}$Si nuclear spin bath, making isotopically enriched nuclear spin-free $^{28}$Si substrates a promising candidate for forming spin quantum bit devices. The FinFET architecture is fully compatible with single-ion implant detection for donor-based qubits, and the donor spin-state readout through electrical detection of spin resonance. We describe device processing steps and discuss results on electrical transport measurements at 0.3 K.

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