Development of a Classical Force Field for the Oxidised Si Surface: Application to Hydrophilic Wafer Bonding

Details Development of a Classical Force Field for the Oxidised Si Surface: Application to Hydrophilic Wafer Bonding Development of a Classical Force Field for the Oxidised Si Surface: Application to Hydrophilic Wafer Bonding

2008-07-21

arxiv.org/abs/0807.3215v1

Journal of Chemical Physics 127 (2007) 204704

Physics

Condensed Matter

Materials Science

Scientific paper

10.1063/1.2799196

We have developed a classical two- and three-body interaction potential to simulate the hydroxylated, natively oxidised Si surface in contact with water solutions, based on the combination and extension of the Stillinger-Weber potential and of a potential originally developed to simulate SiO2 polymorphs. The potential parameters are chosen to reproduce the structure, charge distribution, tensile surface stress and interactions with single water molecules of a natively oxidised Si surface model previously obtained by means of accurate density functional theory simulations. We have applied the potential to the case of hydrophilic silicon wafer bonding at room temperature, revealing maximum room temperature work of adhesion values for natively oxidised and amorphous silica surfaces of 97 mJ/m2 and 90mJ/m2, respectively, at a water adsorption coverage of approximately 1 monolayer. The difference arises from the stronger interaction of the natively oxidised surface with liquid water, resulting in a higher heat of immersion (203 mJ/m2 vs. 166 mJ/m2), and may be explained in terms of the more pronounced water structuring close to the surface in alternating layers of larger and smaller density with respect to the liquid bulk. The computed force-displacement bonding curves may be a useful input for cohesive zone models where both the topographic details of the surfaces and the dependence of the attractive force on the initial surface separation and wetting can be taken into account.

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