Development of a 1K x 1K GaAs QWIP far IR imaging array

Details Development of a 1K x 1K GaAs QWIP far IR imaging array Development of a 1K x 1K GaAs QWIP far IR imaging array

Jan 2004

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2004spie.5167..175j&link_type=abstract

Focal Plane Arrays for Space Telescopes. Edited by Grycewicz, Thomas J.; McCreight, Craig R. Proceedings of the SPIE, Volume 51

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In the on-going evolution of GaAs Quantum Well Infrared Photodetectors (QWIPs) we have developed a 1,024 x 1,024 (1K x 1K), 8.4-9 μm infrared focal plane array (FPA). This 1 megapixel detector array is a hybrid using the Rockwell TCM 8050 silicon readout integrated circuit (ROIC) bump bonded to a GaAs QWIP array fabricated jointly by engineers at the Goddard Space Flight Center (GSFC) and the Army Research Laboratory (ARL). The finished hybrid is thinned at the Jet Propulsion Lab. Prior to this development the largest format array was a 512 x 640 FPA. We have integrated the 1K x 1K array into an imaging camera system and performed tests over the 40K-90K temperature range achieving BLIP performance at an operating temperature of 76K (f/2 camera system). The GaAs array is relatively easy to fabricate once the superlattice structure of the quantum wells has been defined and grown. The overall arrays costs are currently dominated by the costs associated with the silicon readout since the GaAs array fabrication is based on high yield, well-established GaAs processing capabilities. In this paper we will present the first results of our 1K x 1K QWIP array development including fabrication methodology, test data and our imaging results.

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