Determination of spin polarization in InAs/GaAs self-assembled quantum dots

Details Determination of spin polarization in InAs/GaAs self-assembled quantum dots Determination of spin polarization in InAs/GaAs self-assembled quantum dots

2007-10-24

arxiv.org/abs/0710.4542v2

Applied Physics Letters 92, 132106 (2008)

Physics

Condensed Matter

Materials Science

3 pages, 2 figures, Accepted Appl. Phys. Lett

Scientific paper

10.1063/1.2905809

The spin polarization of electrons trapped in InAs self-assembled quantum dot ensembles is investigated. A statistical approach for the population of the spin levels allows one to infer the spin polarization from the measure values of the addition energies. From the magneto-capacitance spectroscopy data, the authors found a fully polarized ensemble of electronic spins above 10 T when $\mathbf{B}\parallel[001]$ and at 2.8 K. Finally, by including the g-tensor anisotropy the angular dependence of spin polarization with the magnetic field $\mathbf{B}$ orientation and strength could be determined.

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