Determination of InN-GaN heterostructure band offsets from internal photoemission measurements

Details Determination of InN-GaN heterostructure band offsets from internal photoemission measurements Determination of InN-GaN heterostructure band offsets from internal photoemission measurements

2007-06-05

arxiv.org/abs/0706.0583v1

Physics

Condensed Matter

Materials Science

10 pages, 3 figures

Scientific paper

Band discontinuities at the InN-GaN heterointerface are experimentally
determined from internal photoemission spectroscopy measurements on n+ InN on
GaN epilayers. The photocurrent shows two threshold energies, one at 1.624 eV
and the other at 2.527 eV. From these we obtain the valence band offset 0.85 eV
and the conduction band offset 1.82 eV.

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