Determination of density of states of thin high-$T_c$ films by FET type microstructures

Details Determination of density of states of thin high-$T_c$ films by FET type microstructures Determination of density of states of thin high-$T_c$ films by FET type microstructures

2006-12-06

arxiv.org/abs/cond-mat/0612169v1

Eur. Phys. J. B 54, 419--421 (2006)

Physics

Condensed Matter

Superconductivity

3 pages, 1 figure

Scientific paper

10.1140/epjb/e2007-00022-x

A simple electronic experiment with a field effect transistor type microstructure is suggested. The thin superconductor layer is the source-drain channel of the layered structure where an AC current is applied. It is necessary to measure the second harmonic of the source-gate voltage and third harmonic of the source-drain voltage. The electronic measurement can give the logarithmic derivative of the density of states which is an important parameter for fitting of parameters of the band structures.

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