Physics – Condensed Matter – Materials Science
Scientific paper
2010-12-21
Physics
Condensed Matter
Materials Science
4 pages, 4 figures
Scientific paper
We report high resolution x-ray diffraction measurements of (Ga,Mn)As and (Ga,Mn)(As,P) epilayers. We observe a structural anisotropy in the form of stacking faults which are present in the (111) and (11-1) planes and absent in the (-111) and (1-11) planes. The stacking faults produce no macroscopic strain. They occupy 0.01 - 0.1 per cent of the epilayer volume. Full-potential density functional calculations evidence an attraction of Mn_Ga impurities to the stacking faults. We argue that the enhanced Mn density along the common [1-10] direction of the stacking fault planes produces sufficiently strong [110]/[1-10] symmetry breaking mechanism to account for the in-plane uniaxial magnetocrystalline anisotropy of these ferromagnetic semiconductors.
Campion R. P.
Gallagher B. L.
Jungwirth Tomas
Kopecky Miloslav
Kub J.
No associations
LandOfFree
Detection of stacking faults breaking the [110]/[1-10] symmetry in ferromagnetic semiconductors (Ga,Mn)As and (Ga,Mn)(As,P) does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Detection of stacking faults breaking the [110]/[1-10] symmetry in ferromagnetic semiconductors (Ga,Mn)As and (Ga,Mn)(As,P), we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Detection of stacking faults breaking the [110]/[1-10] symmetry in ferromagnetic semiconductors (Ga,Mn)As and (Ga,Mn)(As,P) will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-96257