Detection of low energy single ion impacts in micron scale transistors at room temperature

Details Detection of low energy single ion impacts in micron scale transistors at room temperature Detection of low energy single ion impacts in micron scale transistors at room temperature

2007-09-25

arxiv.org/abs/0709.4056v2

Physics

Condensed Matter

Other Condensed Matter

Scientific paper

10.1063/1.2805634

We report the detection of single ion impacts through monitoring of changes in the source-drain currents of field effect transistors (FET) at room temperature. Implant apertures are formed in the interlayer dielectrics and gate electrodes of planar, micro-scale FETs by electron beam assisted etching. FET currents increase due to the generation of positively charged defects in gate oxides when ions (121Sb12+, 14+, Xe6+; 50 to 70 keV) impinge into channel regions. Implant damage is repaired by rapid thermal annealing, enabling iterative cycles of device doping and electrical characterization for development of single atom devices and studies of dopant fluctuation effects.

Affiliated with

Also associated with

No associations

Rating

Detection of low energy single ion impacts in micron scale transistors at room temperature does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Detection of low energy single ion impacts in micron scale transistors at room temperature, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Detection of low energy single ion impacts in micron scale transistors at room temperature will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-694193