Detecting Electronic States at Stacking Faults in Magnetic Thin Films by Tunneling Spectroscopy

Details Detecting Electronic States at Stacking Faults in Magnetic Thin Films by Tunneling Spectroscopy Detecting Electronic States at Stacking Faults in Magnetic Thin Films by Tunneling Spectroscopy

2000-09-28

arxiv.org/abs/cond-mat/0009435v1

Physics

Condensed Matter

Materials Science

4 pages, 4 figures; to be published in Phys. Rev. Lett (2000)

Scientific paper

10.1103/PhysRevLett.85.4365

Co islands grown on Cu(111) with a stacking fault at the interface present a conductance in the empty electronic states larger than the Co islands that follow the stacking sequence of the Cu substrate. Electrons can be more easily injected into these faulted interfaces, providing a way to enhance transmission in future spintronic devices. The electronic states associated to the stacking fault are visualized by tunneling spectroscopy and its origin is identified by band structure calculations.

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