Design of quasi-lateral p-n junction for optical spin-detection in low-dimensional systems

Details Design of quasi-lateral p-n junction for optical spin-detection in low-dimensional systems Design of quasi-lateral p-n junction for optical spin-detection in low-dimensional systems

2004-11-05

arxiv.org/abs/cond-mat/0411130v1

B. Kaestner, "Planar-Geometry Light Emitting Diode: Optical Approach for Spin Detection in Low-Dimensional Systems", Dissertat

Physics

Condensed Matter

Materials Science

Extract from PhD dissertation, 18 pages, 9 figures

Scientific paper

A technology is reviewed which allows one to produce quasi-lateral 2D
electron and hole gas junctions of arbitrary shape. It may be implemented in a
variety of semiconductor heterostructures. Here we concentrate on its
realization in the GaAs/AlGaAs material system and discuss the possibility to
use this structure for optical spin detection in low-dimensional systems.

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