Physics – Condensed Matter – Materials Science
Scientific paper
2007-11-21
J. Appl. Phys. 103, 103717 (2008)
Physics
Condensed Matter
Materials Science
5 pages, 4 figures
Scientific paper
10.1063/1.2931040
We have performed a depth profile study of thermally diffused Mn/GaAs (001) interfaces using photoemission spectroscopy combined with Ar$^+$-ion sputtering. We found that Mn ion was thermally diffused into the deep region of the GaAs substrate and completely reacted with GaAs. In the deep region, the Mn 2$p$ core-level and Mn 3$d$ valence-band spectra of the Mn/GaAs (001) sample heated to 600 $^{\circ}$C were similar to those of Ga$_{1-x}$Mn$_x$As, zinc-blende-type MnAs dots, and/or interstitial Mn in tetrahedrally coordinated by As atoms, suggesting that the Mn 3$d$ states were essentially localized but were hybridized with the electronic states of the host GaAs. Ferromagnetism was observed in the dilute Mn phase.
Ebata K.
Fujimori Atsushi
Hwang Ing-Jye
Ishida Yasuchika
Kanai Kenji
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