Dephasing Time of Two-Dimensional Holes in GaAs Open Quantum Dots

Details Dephasing Time of Two-Dimensional Holes in GaAs Open Quantum Dots Dephasing Time of Two-Dimensional Holes in GaAs Open Quantum Dots

2006-09-26

arxiv.org/abs/cond-mat/0609664v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 4 figures

Scientific paper

We report magnetotransport measurements of two-dimensional holes in open quantum dots, patterned either as a single-dot or an array of dots, on a GaAs quantum well. For temperatures $T$ below 500 mK, we observe signatures of coherent transport, namely, conductance fluctuations and weak antilocalization. From these effects, the hole dephasing time $\tau_\phi$ is extracted using the random matrix theory. While $\tau_\phi$ shows a $T$-dependence that lies between $T^{-1}$ and $T^{-2}$, similar to that reported for electrons, its value is found to be approximately one order of magnitude smaller.

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