Dephasing of Electrons by Two-Level Defects in Quantum Dots

Details Dephasing of Electrons by Two-Level Defects in Quantum Dots Dephasing of Electrons by Two-Level Defects in Quantum Dots

2000-11-08

arxiv.org/abs/cond-mat/0011139v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

two-column 9 pages

Scientific paper

10.1103/PhysRevB.63.195301

The electron dephasing time $\tau_{\phi}$ in a diffusive quantum dot is calculated by considering the interaction between the electron and dynamical defects, modelled as two-level system. Using the standard tunneling model of glasses, we obtain a linear temperature dependence of $1/\tau_{\phi}$, consistent with the experimental observation. However, we find that, in order to obtain dephasing times on the order of nanoseconds, the number of two-level defects needs to be substantially larger than the typical concentration in glasses. We also find a finite system-size dependence of $\tau_{\phi}$, which can be used to probe the effectiveness of surface-aggregated defects.

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