Dephasing in semiconductor-superconductor structures by coupling to a voltage probe

Details Dephasing in semiconductor-superconductor structures by coupling to a voltage probe Dephasing in semiconductor-superconductor structures by coupling to a voltage probe

1999-09-02

arxiv.org/abs/cond-mat/9909029v2

Superlattice Microstr. 28, 67 (2000).

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

13 pages including 3 figures. Accepted for publication in Superlattices and Microstructures

Scientific paper

10.1006/spmi.2000.0890

We study dephasing in semiconductor-superconductor structures caused by coupling to a voltage probe. We consider structures where the semiconductor consists of two scattering regions between which partial dephasing is possible. As a particular example we consider a situation with a double-barrier junction in the normal region. For a single-mode system we study the conductance both as a function of the position of the Fermi level and as a function of the barrier transparency. At resonance, where the double-barrier is fully transparent, we study the suppression of the ideal factor-of-two enhancement of the conductance when a finite coupling to the voltage probe is taken into account.

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