Physics – Condensed Matter – Materials Science
Scientific paper
2005-10-20
Japanese Journal of Applied Physics, 44 (2005) pp. L 1442--L 1445
Physics
Condensed Matter
Materials Science
14 pages, 5 figures
Scientific paper
10.1143/JJAP.44.L1442
We investigated dependence of tunnel magnetoresistance effect in CoFeB/MgO/CoFeB magnetic tunnel junctions on Ar pressure during MgO-barrier sputtering. Sputter deposition of MgO-barrier at high Ar pressure of 10 mTorr resulted in smooth surface and highly (001) oriented MgO. Using this MgO as a tunnel barrier, tunnel magnetoresistance (TMR) ratio as high as 355% at room temperature (578% at 5K) was realized after annealing at 325 C or higher, which appears to be related to a highly (001) oriented CoFeB texture promoted by the smooth and highly oriented MgO. Electron-beam lithography defined deep-submicron MTJs having a low-resistivity Au underlayer with the high-pressure deposited MgO showed high TMR ratio at low resistance-area product (RA) below 10 ohm-um^2 as 27% at RA = 0.8 ohm-um^2, 77% at RA = 1.1 ohm-um^2, 130% at RA = 1.7 ohm-um^2, and 165% at RA = 2.9 ohm-um^2.
Hayakawa Jun
Ikeda Shoji
Lee Young Min
Matsukura Fumihiro
Meguro Toshiyasu
No associations
LandOfFree
Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-476054