Dependence of the electronic structure of self-assembled InGaAs/GaAs quantum dots on height and composition

Details Dependence of the electronic structure of self-assembled InGaAs/GaAs quantum dots on height and composition Dependence of the electronic structure of self-assembled InGaAs/GaAs quantum dots on height and composition

2005-02-16

arxiv.org/abs/cond-mat/0502409v1

Physics

Condensed Matter

Materials Science

14 pages, 12 figures

Scientific paper

10.1063/1.1980534

While electronic and spectroscopic properties of self-assembled In_{1-x}Ga_{x}As/GaAs dots depend on their shape, height and alloy compositions, these characteristics are often not known accurately from experiment. This creates a difficulty in comparing measured electronic and spectroscopic properties with calculated ones. Since simplified theoretical models (effective mass, k.p, parabolic models) do not fully convey the effects of shape, size and composition on the electronic and spectroscopic properties, we offer to bridge the gap by providing accurately calculated results as a function of the dot height and composition. Prominent results are the following. (i) Regardless of height and composition, the electron levels form shells of nearly degenerate states. In contrast, the hole levels form shells only in flat dots and near the highest hole level (HOMO). (ii) In alloy dots, the electrons' ``s-p'' splitting depends weakly on height, while the ``p-p'' splitting depends non-monotonically. In non-alloyed InAs/GaAs dots, both these splittings depend weakly on height. For holes in alloy dots, the ``s-p'' splitting decreases with increasing height, whereas the ``p-p'' splitting remains nearly unchaged. Shallow, non-alloyed dots have a ``s-p'' splitting of nearly the same magnitude, whereas the ``p-p'' splitting is larger. (iii) As height increases, the ``s'' and ``p'' character of the wavefunction of the HOMO becomes mixed, and so does the heavy- and light-hole character. (iv) In alloy dots, low-lying hole states are localized inside the dot. Remarkably, in non-alloyed InAs/GaAs dots these states become localized at the interface as height increases. This localization is driven by the biaxial strain present in the nanostructure.

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