Dependence of quantum-Hall conductance on the edge-state equilibration position in a bipolar graphene sheet

Details Dependence of quantum-Hall conductance on the edge-state equilibration position in a bipolar graphene sheet Dependence of quantum-Hall conductance on the edge-state equilibration position in a bipolar graphene sheet

2009-12-15

arxiv.org/abs/0912.2791v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 4 figures, will be published in PRB

Scientific paper

10.1103/PhysRevB.81.033301

By using four-terminal configurations, we investigated the dependence of longitudinal and diagonal resistances of a graphene p-n interface on the quantum-Hall edge-state equilibration position. The resistance of a p-n device in our four-terminal scheme is asymmetric with respect to the zero point where the filling factor ($\nu$) of the entire graphene vanishes. This resistance asymmetry is caused by the chiral-direction-dependent change of the equilibration position and leads to a deeper insight into the equilibration process of the quantum-Hall edge states in a bipolar graphene system.

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