Dependence of Modulation Amplitude on Electron Density in Unidirectional Lateral Superlattices: The Effect of the Thickness of the Two-dimensional Electron Gas

Details Dependence of Modulation Amplitude on Electron Density in Unidirectional Lateral Superlattices: The Effect of the Thickness of the Two-dimensional Electron Gas Dependence of Modulation Amplitude on Electron Density in Unidirectional Lateral Superlattices: The Effect of the Thickness of the Two-dimensional Electron Gas

2005-02-21

arxiv.org/abs/cond-mat/0502492v1

J. Phys. Soc. Jpn. 74, 1792 (2005)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

9 pages, 7 figures, LaTeX2e with jpsj2 class

Scientific paper

10.1143/JPSJ.74.1792

The amplitude V_0 of unidirectional periodic potential modulation introduced by a surface grating into a two-dimensional electron gas (2DEG) formed at AlGaAs/GaAs heterointerface is measured as a function of electron density n_e by analyzing commensurability oscillation of the magnetoresistance. The electron density is varied either by applying a bias to a metallic back gate or by illumination. The amplitude decreases with increasing density, with the rate |dV_0/dn_e| roughly an order of magnitude larger for the former method. The result is interpreted in terms of the rate, dE_1/d(delta E_c), of the change in the first subband level E_1 in response to the variation of the conduction-band edge delta E_c above the heterointerface. The rate crucially depends on the thickness of the 2DEG.

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