Physics – Condensed Matter – Other Condensed Matter
Scientific paper
2005-04-03
Japanese Journal of Applied Physics Vol. 44, No. 19, 2005, pp.L587-L589.
Physics
Condensed Matter
Other Condensed Matter
12 pages, 5 figures
Scientific paper
10.1143/JJAP.44.L587
We investigated the dependence of giant tunnel magnetoresistance (TMR) on the thickness of an MgO barrier and on the annealing temperature of sputtered CoFeB/MgO/CoFeB magnetic tunnel junctions deposited on SiO2/Si wafers. The resistance-area product exponentially increases with MgO thickness, indicating that the quality of MgO barriers is high in the investigated thickness range of 1.15-2.4 nm. High-resolution transmission electron microscope images show that annealing at 375 C results in the formation of crystalline CoFeB/MgO/CoFeB structures, even though CoFeB electrodes are amorphous in the as-sputtered state. The TMR ratio increases with annealing temperature and is as high as 260% at room temperature and 403% at 5 K.
Hayakawa Jun
Ikeda Shoji
Matsukura Fumihiro
Ohno Hideo
Takahashi Hiromasa
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