Dependence of Curie Temperature on the Thickness of Epitaxial (Ga,Mn)As Film

Details Dependence of Curie Temperature on the Thickness of Epitaxial (Ga,Mn)As Film Dependence of Curie Temperature on the Thickness of Epitaxial (Ga,Mn)As Film

2002-10-22

arxiv.org/abs/cond-mat/0210480v1

Phys. Rev. B 66, 233313 (2002)

Physics

Condensed Matter

Materials Science

6 pages, 4 figures

Scientific paper

10.1103/PhysRevB.66.233313

We present the magnetotransport properties of very thin (5 to 15 nm) single (Ga,Mn)As layers grown by low temperature molecular beam epitaxy. A lower (Ga,Mn)As thickness limit of 5 nm for the ferromagnetic phase and the dependence of the Curie temperature on (Ga,Mn)As thickness are determined from electrical transport measurements. The Curie temperature is determined to be 97 K for the thinnest ferromagnetic sample and is found to decrease for increasing layer thickness. A carrier density of ~7.1$\times10^{20}$ cm$^{-3}$ for the 5 nm thick (Ga,Mn)As layer is determined from Hall measurements. Differences between magnetotransport properties of thick and thin (Ga,Mn)As layers are observed and discussed.

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