Dependence of compositional profile and structural perfection of CdxHg1-xTe graded-gap films on its growing conditions

Details Dependence of compositional profile and structural perfection of CdxHg1-xTe graded-gap films on its growing conditions Dependence of compositional profile and structural perfection of CdxHg1-xTe graded-gap films on its growing conditions

Nov 1999

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1999spie.3890..523a&link_type=abstract

Proc. SPIE Vol. 3890, p. 523-527, Fourth International Conference on Material Science and Material Properties for Infrared Optoe

Physics

1

Scientific paper

Physical-chemical processes of CdxHg1-xTe graded structures (GSS) growing by evaporation condensation- diffusion method on CdTe substrates from HgTe source were analyzed. GSS were melted to the necessary depth and after crystallization were annealed in mercury vapor in order to obtain CdxHg1-xTe structure-perfect epitaxial layers of given composition.

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