Density of states of a graphene in the presence of strong point defects

Details Density of states of a graphene in the presence of strong point defects Density of states of a graphene in the presence of strong point defects

2010-11-09

arxiv.org/abs/1011.1968v1

Phys. Rev. B 82, 155462 (2010)

Physics

Condensed Matter

Strongly Correlated Electrons

6 figures

Scientific paper

The density of states near zero energy in a graphene due to strong point defects with random positions are computed. Instead of focusing on density of states directly, we analyze eigenfunctions of inverse T-matrix in the unitary limit. Based on numerical simulations, we find that the squared magnitudes of eigenfunctions for the inverse T-matrix show random-walk behavior on defect positions. As a result, squared magnitudes of eigenfunctions have equal {\it a priori} probabilities, which further implies that the density of states is characterized by the well-known Thomas-Porter type distribution. The numerical findings of Thomas-Porter type distribution is further derived in the saddle-point limit of the corresponding replica field theory of inverse T-matrix. Furthermore, the influences of the Thomas-Porter distribution on magnetic and transport properties of a graphene, due to its divergence near zero energy, are also examined.

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