Density-Dependent Squeezing of Excitons in Highly Excited Semiconductors

Details Density-Dependent Squeezing of Excitons in Highly Excited Semiconductors Density-Dependent Squeezing of Excitons in Highly Excited Semiconductors

1995-07-31

arxiv.org/abs/cond-mat/9507140v1

Physics

Condensed Matter

6 pages, Two figures (ps) available from author upon request

Scientific paper

The time evolution from coherent states to squeezed states of high density excitons is studied theoretically based on the boson formalism and within the Random Phase Approximation. Both the mutual interaction between excitons and the anharmonic exciton-photon interaction due to phase-space filling of excitons are included in consideration. It is shown that the exciton squeezing depends strongly on the exciton density in semiconductors and becomes smaller with increasing the latter.

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