Demonstration of Rashba spin splitting in GaN-based heterostructures

Details Demonstration of Rashba spin splitting in GaN-based heterostructures Demonstration of Rashba spin splitting in GaN-based heterostructures

2005-09-08

arxiv.org/abs/cond-mat/0509208v1

Physics

Condensed Matter

Other Condensed Matter

7 pages, 3 figures

Scientific paper

10.1063/1.2158024

The circular photogalvanic effect (CPGE), induced by infrared radiation, has been observed in (0001)-oriented GaN quantum well (QW) structures. The photocurrent changes sign upon reversing the radiation helicity demonstrating the existence of spin-splitting of the conduction band in k-space in this type of materials. The observation suggests the presence of a sizeable Rashba type of spin-splitting, caused by the built-in asymmetry at the AlGaN/GaN interface.

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