Delocalized-localized transition in a semiconductor two-dimensional honeycomb lattice

Details Delocalized-localized transition in a semiconductor two-dimensional honeycomb lattice Delocalized-localized transition in a semiconductor two-dimensional honeycomb lattice

2010-07-19

arxiv.org/abs/1007.3168v1

Appl. Phys. Lett. 97, 132113 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1063/1.3493189

We report the magneto-transport properties of a two-dimensional electron gas in a modulation-doped AlGaAs/GaAs heterostructure subjected to a lateral potential with honeycomb geometry. Periodic oscillations of the magneto-resistance and a delocalized-localized transition are shown by applying a gate voltage. We argue that electrons in such artificial-graphene lattices offer a promising approach for the simulation of quantum phases dictated by Coulomb interactions.

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