Degradation of LaMnO{3-y} surface layer in LaMnO{3-y}/ metal interface

Details Degradation of LaMnO{3-y} surface layer in LaMnO{3-y}/ metal interface Degradation of LaMnO{3-y} surface layer in LaMnO{3-y}/ metal interface

2002-01-25

arxiv.org/abs/cond-mat/0201460v1

Appl.Phys.Lett. 81 (2002) 859.

Physics

Condensed Matter

Materials Science

4 pages, 3 figures, accepted for publication in Appl. Phys. Lett.(2002)

Scientific paper

10.1063/1.1497439

We report electrical measurements showing the degradation processes of LaMnO$_{3-y}$ (LaMnO) in LaMnO/normal metal interface in both point contact and planar-type junctions. Immediately after the preparation of the interface, the degradation process was followed by measuring the evolution of the junction resistance versus time. This process is characterized by the appearance of a second maximum in the resistance vs. temperature (R-T) dependence at temperatures lower than the Curie temperature T$_c$, at which the metal-insulator transition occurs in the bulk. These effects are explained in terms of the formation of a depleted interface layer in LaMnO caused by an out-diffusion of oxygen from the manganite surface to the normal metal. This assumption is confirmed by XPS measurement. Similar results on LaSrMnO$_{3-y}$ interfaces are also obtained.

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