Defects in HgCdTe crystals grown by SSR technique

Details Defects in HgCdTe crystals grown by SSR technique Defects in HgCdTe crystals grown by SSR technique

Aug 1998

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998spie.3553....1w&link_type=abstract

Proc. SPIE Vol. 3553, p. 1-8, Detectors, Focal Plane Arrays, and Imaging Devices II, Pingzhi Liang; Marc Wigdor; William G. Fred

Physics

Scientific paper

HgCdTe is a very important material for IR detector. The solid state recrystallization (SSR) is a very useful method to prepare HgCdTe single crystal. The defects in as-grown HgCdTe crystals grown by SSR method are introduced, the relationship between cause of resulting in these defects and crystal growth process is discussed simply in this paper. The research results have shown: if raw material purity is raised, stoichiometry is suitable and quench process is improved, the defects in HgCdTe crystals can be reduced and the quality of as-grown HgCdTe crystals can be improved.

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