Defect scattering in graphene

Details Defect scattering in graphene Defect scattering in graphene

2009-03-15

arxiv.org/abs/0903.2602v1

Physical Review Letters 102, 236805 (2009)

Physics

Condensed Matter

Materials Science

16 pages, 5 figures

Scientific paper

10.1103/PhysRevLett.102.236805

Irradiation of graphene on SiO2 by 500 eV Ne and He ions creates defects that cause intervalley scattering as evident from a significant Raman D band intensity. The defect scattering gives a conductivity proportional to charge carrier density, with mobility decreasing as the inverse of the ion dose. The mobility decrease is four times larger than for a similar concentration of singly charged impurities. The minimum conductivity decreases proportional to the mobility to values lower than 4e^2/(pi*h), the minimum theoretical value for graphene free of intervalley scattering. Defected graphene shows a diverging resistivity at low temperature, indicating insulating behavior. The results are best explained by ion-induced formation of lattice defects that result in mid-gap states.

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