Defect Induced Photoluminescence from Dark Excitonic States in Individual Single-Walled Carbon Nanotubes

Details Defect Induced Photoluminescence from Dark Excitonic States in Individual Single-Walled Carbon Nanotubes Defect Induced Photoluminescence from Dark Excitonic States in Individual Single-Walled Carbon Nanotubes

2008-12-04

arxiv.org/abs/0812.1040v1

Nano Lett., 9, 2010 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures

Scientific paper

10.1021/nl9002798

We show that new low-energy photoluminescence (PL) bands can be created in semiconducting single-walled carbon nanotubes by intense pulsed excitation. The new bands are attributed to PL from different nominally dark excitons that are "brightened" due to defect-induced mixing of states with different parity and/or spin. Time-resolved PL studies on single nanotubes reveal a significant reduction of the bright exciton lifetime upon brightening of the dark excitons. The lowest energy dark state has longer lifetimes and is not in thermal equilibrium with the bright state.

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