Defect-free ZnSe nanowire and nano-needle nanostructures

Details Defect-free ZnSe nanowire and nano-needle nanostructures Defect-free ZnSe nanowire and nano-needle nanostructures

2008-05-13

arxiv.org/abs/0805.1818v2

Appl. Phys. Lett. 93, 143106 (2008); DOI:10.1063/1.2991298; Published 7 October 2008

Physics

Condensed Matter

Materials Science

4 pages, 4 figures

Scientific paper

10.1063/1.2991298

We report on the growth of ZnSe nanowires and nano-needles using molecular beam epitaxy (MBE). Different growth regimes were found, depending on growth temperature and the Zn--Se flux ratio. By employing a combined MBE growth of nanowires and nano-needles without any post-processing of the sample, we achieved an efficient suppression of stacking fault defects. This is confirmed by transmission electron microscopy and by photoluminescence studies.

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